Innovative etching method for silicon: Higher precision through interlayer
In micro- and nanotechnology, highly precise components with tall, narrow structures (high aspect ratios) made from semiconductor materials like silicon are important. A promising fabrication method is gas-phase metal-assisted chemical etching (MacEtch). In this plasma-free process, a thin metal layer defines the pattern on the silicon substrate. The etching step takes place in a chemical environment, where the reaction occurs only at the interface between the metal and silicon. The metal…
Automated coverage analysis
Generated automatically from the coverage listed on this page. CurrentWire adds no editorial claims.
Coverage
1 publication is covering this story.
How CurrentWire compiled this story
Phys.org (phys.org), a Tier B publisher, filed this report on .
Signal breakdown
CurrentWire ranked this story 60.9 of 100 in the snapshot this page was rendered from.
- Freshness
- 31.4 of 35
- Source authority
- 14 of 20
- Coverage breadth
- 4 of 20
- Geographic relevance
- 3.5 of 10
- Story prominence
- 8 of 10
- Velocity
- 0 of 5
Strongest signal: freshness, 31.4 of 35. How each signal is calculated.
Filed under Science · International · News.
CurrentWire is a news discovery platform. This page summarizes and links to original reporting; full articles, imagery and copyright remain with the publishers listed above.