New nitride semiconductor expands material options for more powerful electronics
Polar wurtzite nitride semiconductors, such as aluminum nitride (AlN) and gallium nitride (GaN), are central to modern high-power and high-frequency electronic devices because of their wide band gaps, high breakdown electric fields, and strong spontaneous and piezoelectric polarization.
Phys.org
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Signal breakdown
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- 31.6 of 35
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